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PD - 91811
IRFB9N60A
HEXFET(R) Power MOSFET
l l l l l
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements
D
VDSS = 600V
G S
RDS(on) = 0.75 ID = 9.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
9.2 5.8 37 170 1.3 30 290 9.2 17 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.75 --- 62
Units
C/W
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10/7/98
IRFB9N60A
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units Conditions 600 --- --- V VGS = 0V, I D = 250A --- 0.66 --- V/C Reference to 25C, ID = 1mA --- --- 0.75 VGS = 10V, I D = 5.5A 2.0 --- 4.0 V VDS = VGS, ID = 250A 5.5 --- --- S VDS = 25V, ID = 5.5A --- --- 25 VDS = 600V, VGS = 0V A --- --- 250 VDS = 480V, VGS = 0V, T J = 150C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V --- --- 49 ID = 9.2A --- --- 13 nC VDS = 400V --- --- 20 VGS = 10V, See Fig. 6 and 13 --- 13 --- VDD = 300V --- 25 --- ID = 9.2A ns --- 30 --- RG = 9.1 --- 22 --- RD = 35.5,See Fig. 10 D Between lead, 4.5 --- --- 6mm (0.25in.) nH G from package --- 7.5 --- and center of die contact S --- 1400 --- VGS = 0V --- 180 --- VDS = 25V --- 7.1 --- pF = 1.0MHz, See Fig. 5 --- 1957 --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- 49 --- VGS = 0V, V DS = 480V, = 1.0MHz --- 96 --- VGS = 0V, V DS = 0V to 480V
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 9.2 showing the A G integral reverse --- --- 37 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 9.2A, VGS = 0V --- 530 800 ns TJ = 25C, IF = 9.2A --- 3.0 4.4 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 6.8mH
RG = 25, IAS = 9.2A. (See Figure 12)
ISD 9.2A, di/dt 50A/s, VDD V(BR)DSS,
TJ 150C
2
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IRFB9N60A
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP
10
1
4.7V
20s PULSE WIDTH TJ = 25 C
1 10 100
4.7V
20s PULSE WIDTH TJ = 150 C
1 10 100
0.1 0.1
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
ID = 9.2A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
10
TJ = 150 C
2.0
1.5
TJ = 25 C
1
1.0
0.5
0.1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFB9N60A
2400
20
2000
VGS , Gate-to-Source Voltage (V)
V GS C is s C rss C o ss
= = = =
0V, f = 1M H z C g s + C g d , Cd s S H O R TE D C gd C ds + C gd
ID = 9.2A
400V VDS = 480V VDS = 300V VDS = 120V
16
C , Capacitance (pF )
C iss
1600
C oss
1200
12
8
800
400
C rss
4
0 1 10 100 1000
A
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
V D S , D rain-to-S ource V oltage (V )
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10
I D , Drain Current (A)
100
TJ = 150 C
10us 10 100us 1ms 1 10ms
1
TJ = 25 C
0.1 0.2
V GS = 0 V
0.5 0.7 1.0 1.2
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFB9N60A
10.0
VDS VGS
RD
8.0
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
6.0
10V
Pulse Width 1 s Duty Factor 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1
0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB9N60A
600
EAS , Single Pulse Avalanche Energy (mJ)
TOP
500
1 5V
BOTTOM
ID 4.1A 5.8A 9.2A
VDS
L
D R IV E R
400
RG
20V tp
D .U .T
IA S
300
+ V - DD
A
0 .0 1
200
Fig 12a. Unclamped Inductive Test Circuit
100
0 25 50 75 100 125 150
V (B R )D SS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFB9N60A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFB9N60A
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2.87 (.11 3) 2.62 (.10 3) 10 .5 4 (.415 ) 10 .2 9 (.405 ) 3.7 8 ( .14 9 ) 3.5 4 ( .13 9 ) -A 6 .4 7 (.2 55 ) 6 .1 0 (.2 40 ) -B4 .6 9 (.1 85 ) 4 .2 0 (.1 65 ) 1.32 (.05 2) 1.22 (.04 8)
4 1 5.24 (.60 0) 1 4.84 (.58 4)
1 .1 5 (.0 4 5) M IN 1 2 3
L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN
1 4.09 (.55 5) 1 3.47 (.53 0)
4 .0 6 (.160 ) 3 .5 5 (.140 )
3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
0 .9 3 (.0 37 ) 0 .6 9 (.0 27 ) M BAM
3X
0.55 (.02 2) 0.46 (.01 8)
0.36 (.0 14 )
2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O L LIN G D IM E N S IO N : INC H
2.92 (.11 5) 2.64 (.10 4)
3 O U TL IN E C O N F O R MS TO J E D E C O U T L IN E TO -2 20 A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M
A
IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE
PART NU MBER IR F 10 1 0 9246 9B 1M
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 10/98
8
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